Based on a 1D Poissons equation resolution, we present an analytic model of inversion charges allowing calculation of the drain\r\ncurrent and transconductance in the Metal Oxide Semiconductor Field Effect Transistor. The drain current and transconductance\r\nare described by analytical functions including mobility corrections and short channel effects (CLM, DIBL). The comparison with\r\nthe Pao-Sah integral shows excellent accuracy of the model in all inversion modes from strong to weak inversion in submicronics\r\nMOSFET. All calculations are encoded with a simple C program and give instantaneous results that provide an efficient tool for\r\nmicroelectronics users.
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